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Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide–Electrode System Through First-Principles Calculations
Susan Meñez Aspera, Hideaki Kasai, Hirofumi Kishi, Nobuyoshi Awaya, Shigeo Ohnishi, Yukio TamaiVolume:
42
Language:
english
Pages:
8
DOI:
10.1007/s11664-012-2270-8
Date:
January, 2013
File:
PDF, 728 KB
english, 2013