Realization of the Switching Mechanism in Resistance Random...

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide–Electrode System Through First-Principles Calculations

Susan Meñez Aspera, Hideaki Kasai, Hirofumi Kishi, Nobuyoshi Awaya, Shigeo Ohnishi, Yukio Tamai
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
42
Language:
english
Pages:
8
DOI:
10.1007/s11664-012-2270-8
Date:
January, 2013
File:
PDF, 728 KB
english, 2013
Conversion to is in progress
Conversion to is failed