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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - InAlAs/InGaAs metamorphic HEMT and MOS-HEMT with regrown Source/Drain by MOCVD
Zhou, Xiuju, Li, Qiang, Lau, Kei MayYear:
2011
Language:
english
Pages:
2
DOI:
10.1109/drc.2011.5994437
File:
PDF, 946 KB
english, 2011