Novel Palladium Germanide Schottky Contact for High...

Novel Palladium Germanide Schottky Contact for High Performance Schottky Barrier Ge MOSFETs and Characterization of Its Leakage Current Mechanism

Oh, Se-Kyung, Shin, Hong-Sik, Kang, Min-Ho, Lee, Ga-Won, Lee, Hi-Deok
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Volume:
12
Language:
english
Pages:
4
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2012.6304
Date:
July, 2012
File:
PDF, 644 KB
english, 2012
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