Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices
Tirado, J M, Sanchez-Rojas, J L, Izpura, J IVolume:
21
Year:
2006
Language:
english
Pages:
10
DOI:
10.1088/0268-1242/21/8/029
File:
PDF, 967 KB
english, 2006