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Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealing
W. Futako, K. Yoshino, K. Nakamura, C.M. Fortmann, I. ShimizuVolume:
198-200
Year:
1996
Language:
english
Pages:
1050
DOI:
10.1016/0022-3093(96)00037-3
File:
PDF, 244 KB
english, 1996