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Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process
S.S. Kim, G.N. Parsons, G.G. Fountain, G. LucovskyVolume:
115
Year:
1989
Language:
english
Pages:
72
DOI:
10.1016/0022-3093(89)90363-3
File:
PDF, 203 KB
english, 1989