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Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies
G. Lucovsky, T. Yasuda, Y. Ma, S. Hattangady, V. Misra, X.-L. Xu, B. Hornung, J.J. WortmanVolume:
179
Year:
1994
Language:
english
Pages:
367
DOI:
10.1016/0022-3093(94)90716-1
File:
PDF, 1.31 MB
english, 1994