Enhancement of the deposition rate of a-Si:H by...

Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge

Toru Ikeda, Ian S. Osborne, Nobuhiro Hata, Akihisa Matsuda
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Volume:
198-200
Year:
1996
Language:
english
Pages:
991
DOI:
10.1016/0022-3093(96)00016-6
File:
PDF, 230 KB
english, 1996
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