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Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge
Toru Ikeda, Ian S. Osborne, Nobuhiro Hata, Akihisa MatsudaVolume:
198-200
Year:
1996
Language:
english
Pages:
991
DOI:
10.1016/0022-3093(96)00016-6
File:
PDF, 230 KB
english, 1996