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Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from ‘new’ deposition techniques
Ian S. Osborne, Nobuhiro Hata, Akihisa MatsudaVolume:
198-200
Year:
1996
Language:
english
Pages:
995
DOI:
10.1016/0022-3093(96)00017-8
File:
PDF, 273 KB
english, 1996