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A study of surface reactions during the growth of B-doped a-Si:H using the intermittent deposition technique
Toshihiro Kamei, Nobuhiro Hata, Akihisa MatsudaVolume:
198-200
Year:
1996
Language:
english
Pages:
1003
DOI:
10.1016/0022-3093(96)00021-x
File:
PDF, 293 KB
english, 1996