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Low band gap amorphous silicon deposited under He dilution in the γ regime of an rf glow discharge: properties and stability
A.R. Middya, S. Hazra, S. Ray, A.K. Barua, C. LongeaudVolume:
198-200
Year:
1996
Language:
english
Pages:
1072
DOI:
10.1016/0022-3093(96)00043-9
File:
PDF, 330 KB
english, 1996