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Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure
Bernd Wenzien, Peter Käckell, Friedhelm BechstedtVolume:
331-333
Year:
1995
Language:
english
Pages:
1110
DOI:
10.1016/0039-6028(95)00287-1
File:
PDF, 397 KB
english, 1995