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Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer
U. Resch-Esser, N. Esser, D.T. Wang, M. Kuball, J. Zegenhagen, B.O. Fimland, W. RichterVolume:
352-354
Year:
1996
Language:
english
Pages:
77
DOI:
10.1016/0039-6028(95)01093-9
File:
PDF, 1.15 MB
english, 1996