Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges
Patrick Kae-Nune, Jérôme Perrin, Jacques Jolly, Jean GuillonVolume:
360
Year:
1996
Language:
english
Pages:
1
DOI:
10.1016/0039-6028(96)00732-7
File:
PDF, 278 KB
english, 1996