Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures
A. Guillén-Cervantes, Z. Rivera-Álvarez, M. López-López, A. Ponce-Pedraza, C. Guarneros, V.M. Sánchez-ReséndizVolume:
258
Year:
2011
Language:
english
Pages:
1272
DOI:
10.1016/j.apsusc.2011.09.089
File:
PDF, 995 KB
english, 2011