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Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors
Y.G. Xiao, M.H. Tang, Y. Xiong, J.C. Li, C.P. Cheng, B. Jiang, H.Q. Cai, Z.H. Tang, X.S. Lv, X.C. Gu, Y.C. ZhouVolume:
12
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.cap.2012.05.008
File:
PDF, 526 KB
english, 2012