Electrical characteristics of homoepitaxial p-GaSb analyzed by the p–n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI–GaAs
Jun Oh Kim, Sam Kyu NohVolume:
12
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.cap.2012.06.001
File:
PDF, 611 KB
english, 2012