Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
Lourdes Pelaz, Luis A. Marqués, Maria Aboy, Pedro López, Juan BarbollaVolume:
33
Year:
2005
Language:
english
Pages:
106
DOI:
10.1016/j.commatsci.2004.12.043
File:
PDF, 310 KB
english, 2005