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Depth dependent optoelectronic properties of Cu(In,Ga)Se2 with lateral resolution in the micron/submicron scale from luminescence studies
G.H. Bauer, S.J. Heise, S. Knabe, O. Neumann, R. Brüggemann, D. Hariskos, W. WitteVolume:
10
Year:
2011
Language:
english
Pages:
213
DOI:
10.1016/j.egypro.2011.10.179
File:
PDF, 735 KB
english, 2011