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Determination of In concentration in InGaAs/GaAs 0 0 1 epilayers in the early stage of anisotropic stress relaxation
J. Sass, K. Mazur, F. Eichhorn, W. Strupiński, A. Turos, N. SchellVolume:
401
Year:
2005
Language:
english
DOI:
10.1016/j.jallcom.2005.02.050
File:
PDF, 138 KB
english, 2005