Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films...

Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films grown by laser ablation

N. Gopalakrishnan, B.C. Shin, K.P. Bhuvana, J. Elanchezhiyan, T. Balasubramanian
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Volume:
465
Year:
2008
Language:
english
DOI:
10.1016/j.jallcom.2007.10.135
File:
PDF, 393 KB
english, 2008
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