Preparation and characterization of Ga2xIn2(1−x)O3 films...

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (1 0 0) substrates by MOCVD

Lingyi Kong, Jin Ma, Fan Yang, Caina Luan, Zhen Zhu
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Volume:
499
Year:
2010
Language:
english
DOI:
10.1016/j.jallcom.2010.02.092
File:
PDF, 669 KB
english, 2010
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