Influence of the misorientation of 6H–SiC substrate on the...

Journal of Alloys and Compounds 2011 Vol. 509; Iss. 8

Influence of the misorientation of 6H–SiC substrate on the quality of GaN epilayer grown by MOVPE

Shuang Qu, Chengxin Wang, Shuqiang Li, Xiangang Xu, Huihui Shao, Yan Peng, Yuqiang Gao, Xiufang Chen, Xiaobo Hu
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Volume:
509
Year:
2011
Language:
english
DOI:
10.1016/j.jallcom.2010.12.150
File:
PDF, 639 KB
english, 2011
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