Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics
Özkan Vural, Yasemin Şafak, Abdülmecit Türüt, Şemsettin AltındalVolume:
513
Year:
2012
Language:
english
DOI:
10.1016/j.jallcom.2011.09.101
File:
PDF, 1022 KB
english, 2012