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Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
Mahesh Kumar, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Basanta Roul, A.T. Kalghatgi, S.B. KrupanidhiVolume:
513
Year:
2012
Language:
english
DOI:
10.1016/j.jallcom.2011.10.009
File:
PDF, 938 KB
english, 2012