Influence of the GaN spacer thickness on the structural and...

Journal of Alloys and Compounds 2012 Vol. 526; Iss. none

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

Wen-Cheng Ke, Shuo-Jen Lee, Shiow-Long Chen, Chia-Yu Kao, Wei-Chung Houng, Chih-An Wei, Yi-Ru Su
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Volume:
526
Year:
2012
Language:
english
DOI:
10.1016/j.jallcom.2012.01.158
File:
PDF, 1019 KB
english, 2012
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