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High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105 A/cm2 grown by metal-organic vapor-phase epitaxy
Hiroki Sugiyama, Atsushi Teranishi, Safumi Suzuki, Masahiro AsadaVolume:
336
Year:
2011
Language:
english
DOI:
10.1016/j.jcrysgro.2011.09.010
File:
PDF, 867 KB
english, 2011