High-uniformity InP-based resonant tunneling diode wafers...

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105 A/cm2 grown by metal-organic vapor-phase epitaxy

Hiroki Sugiyama, Atsushi Teranishi, Safumi Suzuki, Masahiro Asada
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
336
Year:
2011
Language:
english
DOI:
10.1016/j.jcrysgro.2011.09.010
File:
PDF, 867 KB
english, 2011
Conversion to is in progress
Conversion to is failed