Growth and strain characterization of high quality GaN...

Journal of Crystal Growth 2012 Vol. 350; Iss. 1

Growth and strain characterization of high quality GaN crystal by HVPE

Huiyuan Geng, Haruo Sunakawa, Norihiko Sumi, Kazutomi Yamamoto, A. Atsushi Yamaguchi, Akira Usui
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Volume:
350
Year:
2012
Language:
english
DOI:
10.1016/j.jcrysgro.2011.12.020
File:
PDF, 1.13 MB
english, 2012
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