Single crystal growth of semiconductors and defect studies via positron annihilation spectroscopy
N.M. Abdul-Jabbar, E.D. Bourret-Courchesne, B.D. WirthVolume:
352
Year:
2012
Language:
english
DOI:
10.1016/j.jcrysgro.2012.02.011
File:
PDF, 464 KB
english, 2012