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Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature
D. Vazquez-Cortas, S. Shimomura, M. Lopez-Lopez, E. Cruz-Hernandez, S. Gallardo-Hernandez, Y. Kudriavtsev, V.H. Mendez-GarciaVolume:
347
Year:
2012
Language:
english
DOI:
10.1016/j.jcrysgro.2012.03.008
File:
PDF, 601 KB
english, 2012