Corrigendum to “Vapor-phase epitaxial growth of GaN films...

Journal of Crystal Growth 2012 Vol. 356; Iss. none

Corrigendum to “Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3” [Journal of Crystal Growth 350 (2012) 56–59]

Mamoru Imade, Yuan Bu, Tomoaki Sumi, Akira Kitamoto, Masashi Yoshimura, Takatomo Sasaki, Masashi Isemura, Yusuke Mori
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Volume:
356
Year:
2012
Language:
english
DOI:
10.1016/j.jcrysgro.2012.06.001
File:
PDF, 67 KB
english, 2012
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