The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma
W.M.M. Kessels, F.J.H. van Assche, P.J. van den Oever, M.C.M. van de SandenVolume:
338-340
Year:
2004
Language:
english
DOI:
10.1016/j.jnoncrysol.2004.02.017
File:
PDF, 289 KB
english, 2004