Properties of a-Si:H and a-(Si,Ge):h films grown using...

Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire–ECR plasma processes

Matthew A. Ring, Vikram L. Dalal, Kamal K. Muthukrishnan
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Volume:
338-340
Year:
2004
Language:
english
DOI:
10.1016/j.jnoncrysol.2004.02.022
File:
PDF, 266 KB
english, 2004
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