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Effects of grain size and plasma-induced modification of the dielectric on the mobility and stability of bottom gate microcrystalline silicon TFTs
S. Kasouit, P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, I.D. FrenchVolume:
338-340
Year:
2004
Language:
english
DOI:
10.1016/j.jnoncrysol.2004.02.076
File:
PDF, 379 KB
english, 2004