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Effect of channel length on the threshold voltage degradation of hydrogenated amorphous silicon TFTs due to the drain bias stress
Kwang-Sub Shin, Jae-Hoon Lee, Sang-Myeon Han, In-Hyuk Song, Min-Koo HanVolume:
352
Year:
2006
Language:
english
DOI:
10.1016/j.jnoncrysol.2005.10.068
File:
PDF, 199 KB
english, 2006