Undoped and arsenic-doped low temperature...

Undoped and arsenic-doped low temperature (∼165 °C) microcrystalline silicon for electronic devices process

K. Kandoussi, C. Simon, N. Coulon, T. Mohammed-Brahim, A. Moreac
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Volume:
352
Year:
2006
Language:
english
DOI:
10.1016/j.jnoncrysol.2005.11.147
File:
PDF, 465 KB
english, 2006
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