Origins of optical absorption between 4.8 and...

Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions

R.H. Magruder III, A. Stesmans, K. Clémer, R.A. Weeks, R.A. Weller
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Volume:
352
Year:
2006
Language:
english
DOI:
10.1016/j.jnoncrysol.2006.03.069
File:
PDF, 222 KB
english, 2006
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