Beyond SiO2 technology: Simulation of the impact of high-κ...

Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility

Giulio Ferrari, J.R. Watling, S. Roy, J.R. Barker, A. Asenov
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Volume:
353
Year:
2007
Language:
english
DOI:
10.1016/j.jnoncrysol.2006.10.044
File:
PDF, 165 KB
english, 2007
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