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Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures
Y.V. Gomeniuk, S.O. Gordienko, A.N. Nazarov, A.V. Vasin, A.V. Rusavsky, V.G. Stepanov, V.S. Lysenko, D. Ballutaud, S. AshokVolume:
358
Year:
2012
Language:
english
DOI:
10.1016/j.jnoncrysol.2011.09.006
File:
PDF, 1.24 MB
english, 2012