Investigation of charge storage and retention...

Microelectronic Engineering 2012 Vol. 98; Iss. none

Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications

Hong Hanh Nguyen, Raja Jayapal, Ngoc Son Dang, Van Duy Nguyen, Thanh Thuy Trinh, Kyungsoo Jang, Junsin Yi
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Volume:
98
Year:
2012
Language:
english
DOI:
10.1016/j.mee.2012.05.058
File:
PDF, 1.25 MB
english, 2012
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