Gate leakage current in GaN-based mesa- and planar-type...

Microelectronics Reliability 2012 Vol. 52; Iss. 7

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

J. Kováč, A. Šatka, A. Chvála, D. Donoval, P. Kordoš, S. Delage
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Volume:
52
Year:
2012
Language:
english
DOI:
10.1016/j.microrel.2012.02.003
File:
PDF, 562 KB
english, 2012
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