Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
M. Asghar, F. Iqbal, S.M. Faraz, V. Jokubavicius, Q. Wahab, M. SyväjärviVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.036
File:
PDF, 203 KB
english, 2012