300 mm Czochralski silicon wafers optimized with...

Physica B: Condensed Matter 2012 Vol. 407; Iss. 15

300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation

G. Kissinger, G. Raming, R. Wahlich, T. Müller
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Volume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.055
File:
PDF, 286 KB
english, 2012
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