Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
M. Meduňa, J. Růžička, O. Caha, J. Buršík, M. SvobodaVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.063
File:
PDF, 768 KB
english, 2012