Characterisation of defects in p-GaN by admittance spectroscopy
O.S. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, R.J. Airey, M. Kappers, C.J. HumphreysVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.077
File:
PDF, 344 KB
english, 2012