Effect of O-vacancy defects on the Schottky barrier heights...

Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Hyeon-Kyun Noh, Young Jun Oh, K.J. Chang
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Volume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.079
File:
PDF, 576 KB
english, 2012
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