Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces
Hyeon-Kyun Noh, Young Jun Oh, K.J. ChangVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.079
File:
PDF, 576 KB
english, 2012