Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
M. Asghar, F. Iqbal, S. Faraz, V. Jokubavicius, Q. Wahab, M. SyväjärviVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.08.085
File:
PDF, 195 KB
english, 2012