On the effects of NBTI degradation in p-MOSFET devices
H. Hussin, N. Soin, N.M. Karim, S.F. Wan Muhamad HattaVolume:
407
Year:
2012
Language:
english
DOI:
10.1016/j.physb.2011.09.048
File:
PDF, 228 KB
english, 2012