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Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon
D. Pastor, J. Olea, A. del Prado, E. García-Hemme, R. García-Hernansanz, G. González-DíazVolume:
104
Year:
2012
Language:
english
DOI:
10.1016/j.solmat.2012.04.049
File:
PDF, 578 KB
english, 2012