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Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, A.T. Kalghatgi, S.B. KrupanidhiVolume:
152
Year:
2012
Language:
english
DOI:
10.1016/j.ssc.2012.06.023
File:
PDF, 710 KB
english, 2012